Модуль платы светодиодного солнечного симулятора PCBA 200-1750 нм
SWIR LED chip materials primarily belong to III-V compound semiconductors.
В зависимости от целевой длины волны (обычно варьируется от 1050nm to 2500nm), К наиболее часто используемым материалам относятся:
- InGaAs (Арсенид индия-галлия): Самый популярный материал для SWIR. By adjusting the ratio of Indium to Gallium, it can cover the majority of the short-wave infrared spectrum (например, 1050nm–1700nm).
- InP (Indium Phosphide): Frequently used as the substrate for epitaxial growth or for high-performance flip-chip structures.
- GaAs (Gallium Arsenide): Often used for shorter wavelengths near the NIR border or as a foundational layer in epitaxial structures.
- GaSb (Gallium Antimonide): Utilized when the application requires longer wavelengths, typically exceeding 2000нм.
These materials are chosen because their bandgap specifically corresponds to the energy of SWIR photons, whereas traditional Silicon (Si) is transparent and ineffective in this range.
